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Sanyo Electric Components Datasheet

B1127 Datasheet

2SB1127

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B1127 pdf
Ordering number:2452
PNP Epitaxial Planar Silicon Transistor
2SB1127
20V/5A Switching Applications
Applications
· Strobe, power supplies, relay drivers, lamp drivers.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity.
· Fast switching speed.
Package Dimensions
unit:mm
2009A
[2SB1127]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
VCB=–20V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–500mA
VCE=–2V, IC=–4A
VCE=–5V, IC=–200mA
IC=–3A, IB=–60mA
IC=–3A, IB=–60mA
JEDEC : TO-126
B : Base
C : Collector
E : Emitter
Ratings
–25
–20
–5
–5
–8
–0.5
1
10
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ
100*
60
320
–250
–1.0
max
–500
–500
400*
–500
–1.3
Unit
nA
nA
MHz
mV
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4157TA, TS No.2452–1/4


Sanyo Electric Components Datasheet

B1127 Datasheet

2SB1127

No Preview Available !

B1127 pdf
2SB1127
Parameter
Symbol
Conditions
Output Capacitance
Cob
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
ton
Storage Time
tstg
Fall Time
tf
* : The 2SB1127 is classified by 500mA hFE as follows :
VCB=–10V, f=1MHz
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuti.
See specified Test Circuit.
See specified Test Circuit.
100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
min typ
60
–25
–20
–5
40
200
10
max
Unit
pF
V
V
V
ns
ns
ns
No.2452–2/4


Part Number B1127
Description 2SB1127
Maker Sanyo
Total Page 4 Pages
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