PNP/NPN Epitaxial Planar Silicon Transistors
30V/8A High-Current Switching Applications
· Suitable for relay drivers, high-speed inverters,
converters and other general high-current switching.
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
( ) : 2SB1267
E : Emitter
C : Collector
B : Base
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
–55 to +150
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
* : The 2SB1267/2SD1903 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/D251MH/5137TA, TS No.2263–1/4