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Sanyo Electric Components Datasheet

BFL4026 Datasheet

N-Channel Silicon MOSFET

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BFL4026 pdf
Ordering number : ENA1797A
BFL4026
SANYO Semiconductors
DATA SHEET
BFL4026
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)=2.8Ω (typ.)
10V drive
Input capacitance Ciss=650pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900 V
Gate-to-Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
5A
3.5 A
Drain Current (Pulse)
IDP PW10μs, duty cycle1%
10 A
Allowable Power Dissipation
PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0 W
35 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
132 mJ
Avalanche Current *5
IAV
5A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=5A (Fig.1)
*5 L10mH, single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
BFL4026-1E
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
2.76
0.5 1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
FL4026
LOT No.
1
3
http://semicon.sanyo.com/en/network
71112 TKIM/70710QB TKIM TC-00002399 No.A1797-1/7


Sanyo Electric Components Datasheet

BFL4026 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

BFL4026 pdf
BFL4026
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=2.5A
ID=2.5A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5A
IS=5A, VGS=0V
See Fig.3
IS=5A, VGS=0V, di/dt=100A/μs
min
900
Ratings
typ
2.0
1.4 2.8
2.8
650
100
35
14
37
117
39
33
5.3
16.5
0.85
720
4700
max
1.0
±100
4.0
3.6
1.2
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
50Ω
RG G
D
L
S BFL4026
10V
0V
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.0.5%
G
VDD=200V
ID=2.5A
RL=80Ω
D VOUT
BFL4026
P.G RGS=50Ω S
Fig.3 Reverse Recovery Time Test Circuit
BFL4026 D
G
S
500μH
VDD=50V
Driver MOSFET
Ordering Information
Device
BFL4026-1E
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
No.A1797-2/7


Part Number BFL4026
Description N-Channel Silicon MOSFET
Maker Sanyo
Total Page 7 Pages
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