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Sanyo Electric Components Datasheet

BFL4036 Datasheet

N-Channel Silicon MOSFET

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BFL4036 pdf
Ordering number : ENA1830
BFL4036
SANYO Semiconductors
DATA SHEET
BFL4036
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)=0.4Ω (typ.)
Input capacitance Ciss=1000pF (typ.)
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW10μs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
500 V
±30 V
14 A
9.6 A
50 A
2.0 W
37 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
122 mJ
14 A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=1mH, IAV=14A (Fig.1)
*5 L1mH, single pulse
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4036
LOT No.
1
3
http://semicon.sanyo.com/en/network
90810QB TK IM TC-00002470 No. A1830-1/5


Sanyo Electric Components Datasheet

BFL4036 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

BFL4036 pdf
BFL4036
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=400V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See Fig.2
See Fig.2
See Fig.2
See Fig.2
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
VDS=200V, VGS=10V, ID=14A
IS=14A, VGS=0V
See Fig.3
IS=14A, VGS=0V, di/dt=100A/μs
min
500
Ratings
typ
3
3.5 7
0.4
1000
200
44
22
66
117
46
38.4
6.7
22.1
0.95
520
4200
max
100
±10
5
0.52
1.3
Unit
V
μA
μA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
50Ω
RG
DL
G
BFL4036
10V
0V
50Ω S
Fig.2 Switching Time Test Circuit
VDD
VIN
10V
0V
VIN
PW=10μs
D.C.0.5%
G
VDD=200V
ID=7A
RL=28.6Ω
D VOUT
BFL4036
P.G RGS=50Ω S
Fig.3 Reverse Recovery Time Test Circuit
BFL4036 D
G
500μH
S
VDD=50V
Driver MOSFET
No. A1830-2/5


Part Number BFL4036
Description N-Channel Silicon MOSFET
Maker Sanyo
Total Page 5 Pages
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