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Sanyo Electric Components Datasheet

D1159 Datasheet

2SD1159

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D1159 pdf
Ordering number:EN837E
NPN Triple Diffused Planar Silicon Transistor
2SD1159
TV Horizontal Deflection Output,
High-Current Switching Applications
Features
· Capable of efficient drive with small internal loss due
to excellent tf.
Package Dimensions
unit:mm
2010C
[2SD1159]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
VCE=5V, IC=1A
IC=4A, IB=0.4A
IC=4A, IB=0.4A
2.55
Conditions
Conditions
2.55
1 : Base
0.4
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC-46
Ratings
200
60
6
4.5
10
40
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
0.1 mA
0.1 mA
30 160
25
10 MHz
0.5 1.0 V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/91096TS (KOTO) 8-3991/5257KI/O141KI, TS No.837–1/3


Sanyo Electric Components Datasheet

D1159 Datasheet

2SD1159

No Preview Available !

D1159 pdf
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Fall Time
2SD1159
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
tf
IC=5mA, IE=0
IC=5mA, RBE=
IE=5mA, IC=0
See specified Test Circuit.
Specified Test Circuit
Ratings
min typ
200
60
6
0.2
max
0.5
Unit
V
V
V
µs
No.837–2/3


Part Number D1159
Description 2SD1159
Maker Sanyo
Total Page 3 Pages
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