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Sanyo Electric Components Datasheet

D1903 Datasheet

2SD1903

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D1903 pdf
Ordering number:EN2263A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1267/2SD1903
30V/8A High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters and other general high-current switching.
Features
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm
2049B
[2SB1267/2SD1903]
( ) : 2SB1267
Specifications
E : Emitter
C : Collector
B : Base
SANYO :TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)60
(–)30
(–)6
(–)8
(–)15
1.65
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
IC=(–)3A, IB=(–)0.15A
Ratings
min typ
70*
30
120
max
(–)0.1
(–)0.1
280*
0.4
(–0.5)
Unit
µA
µA
MHz
V
V
* : The 2SB1267/2SD1903 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/D251MH/5137TA, TS No.2263–1/4


Sanyo Electric Components Datasheet

D1903 Datasheet

2SD1903

No Preview Available !

D1903 pdf
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1267/2SD1903
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
tf See specified test circuit.
Switching Time Test Circuit
Ratings
min typ
(–)60
(–)30
(–)6
0.1
(0.2)
0.5
0.03
max
Unit
V
V
V
µs
µs
µs
µs
No.2263–2/4


Part Number D1903
Description 2SD1903
Maker Sanyo
Total Page 4 Pages
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