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Sanyo Electric Components Datasheet

D1936 Datasheet

2SD1936

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D1936 pdf
Ordering number:EN2468
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1296/2SD1936
AF Amplifier Applications
Applications
· AF power amplifier, medium-speed switching, small-
sized motor drivers.
Features
· Large current capacity.
· Low collector to emitter saturation voltage.
· Wide ASO.
Package Dimensions
unit:mm
2033
[2SB1296/2SD1936]
( ) : 2SB1296
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
VCB=(–)12V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
hFE2 VCE=(–)2V, IC=(–)800mA
* : The 2SB1296/2SD1936 are classified by 50mA hFE as follows :
2SB1296 140 S 280 200 T 400 280 U 560
2SB1936 140 S 280 200 T 400 280 U 560 400 V 800
B : Base
C : Collector
E : Emitter
SANYO : SPA
Ratings
(–)15
(–)15
(–)5
(–)0.8
(–)3
300
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
Ratings
min typ
140*
80
max
(–)100
(–)100
(560)*
800*
Unit
nA
nA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/4207TA, TS No.2468–1/5


Sanyo Electric Components Datasheet

D1936 Datasheet

2SD1936

No Preview Available !

D1936 pdf
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB1296/2SD1936
Symbol
Conditions
fT VCE=(–)2V, IC=(–)50mA
Cob VCB=(–)10V, f=1MHz
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)5mA, IB=(–)0.5mA
IC=(–)400mA, IB=(–)20mA
IC=(–)400mA, IB=(–)20mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
Ratings
min typ
(300)
200
(15)
10
(–)10
(–)100
(–)0.9
(–)15
(–)15
(–)5
max
(–)25
(–)200
(–)1.2
Unit
MHz
MHz
pF
pF
mV
mV
V
V
V
V
No.2468–2/5


Part Number D1936
Description 2SD1936
Maker Sanyo
Total Page 5 Pages
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