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Sanyo Electric Components Datasheet

D2198 Datasheet

2SD2198

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D2198 pdf
Ordering number : EN3149A
2SB1449 / 2SD2198
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1449 / 2SD2198 High-Current Switching
Applications
Features
Surface mount type device making the following possible.
- Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.
- High density surface mount applications.
- Small size of 2SB1449/2SD2198-applied equipment.
Low collector-to-emitter saturation voltage.
Specifications ( ) : 2SB1449
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)3A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
* : The 2SBB1449 / 2SD2198 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
Ratings
(--)60
(--)50
(--)6
(--)5
(--)9
1.65
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
min
70*
30
Ratings
typ
max
(--)0.1
(--)0.1
280*
Unit
mA
mA
30 MHz
(160)100
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71006FA MS IM B-5893 / 41504TN (PC) / O1598HA (KT) / 7039MO, TS No.3149-1/5


Sanyo Electric Components Datasheet

D2198 Datasheet

2SD2198

No Preview Available !

D2198 pdf
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1449 / 2SD2198
Symbol
Conditions
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(--)3A, IB=(--)0.3A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=
IE=(--)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
(--)60
(--)50
(--)6
0.1
(0.7)1.4
0.2
max
(--)0.4
Unit
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7001-002
10.2
4.5
1.3
12 3
0.8
1.2
2.55 2.55
2.55 2.55
0 to 0.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Switching Time Test Circuit
PW=20µs
tr, tf15ns
INPUT
50
IB1
IB2
RB
1
VR
100
+
1µF
OUTPUT
RL
+
1µF
VBE= --5V
VCC=20V
10IB1= --10IB2=IC=2A
For PNP, the polarity is reversed.
--10
2SB1449
--8
--6
--4
IC -- VCE
--400mA--350mA--300-m-2A50mA
--200mA
--150mA
--100mA
--50mA
--2
0 IB=0mA
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4
Collector-to-Emitter Voltage, VCE -- V ITR09679
10
8 440500mmAA
6
4
IC -- VCE
350mA300mA 250mA
2SD2198
200mA
150mA
100mA
50mA
2
0 IB=0mA
0 0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE -- V ITR09680
No.3149-2/5


Part Number D2198
Description 2SD2198
Maker Sanyo
Total Page 5 Pages
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