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Sanyo Electric Components Datasheet

D2199 Datasheet

2SD2199

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D2199 pdf
Ordering number : EN3150A
2SB1450 / 2SD2199
SANYO Semiconductors
DATA SHEET
2SB1450 / 2SD2199 PNP / NPN Epitaxial Planar Silicon Transistors
50V/7A Switching Applications
Features
Surface mount type device making the following possible.
- Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment.
- High density surface mount applications.
- Small size of 2SB1450/2SD2199-applied equipment.
Low collector-to-emitter saturation voltage.
Highly resistant to breakdown because of wide ASO.
Specifications ( ) : 2SB1450
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
Ratings
(--)60
(--)50
(--)6
(--)7
(--)12
1.65
40
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
(--)0.1 mA
(--)0.1 mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2407FA TI IM TC-00000977 / 41504TN (PC) / O1598HA (KT) / 7039MO, TS No.3150-1/4


Sanyo Electric Components Datasheet

D2199 Datasheet

2SD2199

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D2199 pdf
2SB1450 / 2SD2199
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
hFE1
hFE2
fT
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)5A
VCE=(--)5V, IC=(--)1A
IC=(--)4A, IB=(--)0.4A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=
IE=(--)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
* : The 2SBB1450 / 2SD2199 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
min
70*
30
Ratings
typ
10
(--)60
(--)50
(--)6
0.2
(0.7)0.9
(0.1)0.3
max
280*
(--)0.4
Unit
MHz
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7001-002
10.2
4.5
1.3
Switching Time Test Circuit
PW=20µs
tr, tf15ns
INPUT
50
IB1
IB2
RB
1
VR
100
+
1µF
OUTPUT
RL
+
1µF
12
0.8
2.55
3
1.2
2.55
2.55 2.55
0 to 0.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
VBE= --5V
VCC=20V
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
--12
2SB1450
--10
--8
IC -- VCE
--1A --800m--6A00m--4A00mA
--200mA
--6
--100mA
--80mA
--4 --60mA
--40mA
--2 --20mA
--10mA
IB=0mA
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Collector-to-Emitter Voltage, VCE -- V ITR09695
IC -- VCE
12
400mA
2SD2199
10
200mA
8
100mA
6 80mA
60mA
4 40mA
20mA
2
IB=0mA
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE -- V ITR09696
No.3150-2/4


Part Number D2199
Description 2SD2199
Maker Sanyo
Total Page 4 Pages
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