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Sanyo Electric Components Datasheet

D2200 Datasheet

2SD2200

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D2200 pdf
Ordering number:EN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type device making the following
possible.
-Reduction in the number of manufacturing pro-
cesses for 2SB1451/2SD2200-applied equipment.
-High density surface mount applications.
-Small size of 2SB1451/2SD2200-applied equip-
ment.
· Low collector-to-emitter saturation voltage.
· Large current capacity.
Package Dimensions
unit:mm
2069B
[2SB1451/2SD2200]
( ) : 2SB1451
Specifications
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
(–)90
(–)80
(–)6
(–)5
(–)9
1.65
30
150
–55 to +150
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
IC=(–)3A, IB=(–)0.3A
Ratings
min typ
70*
30
20
max
(–)0.1
(–)0.1
280*
0.4
(–0.5)
Unit
mA
mA
MHz
V
V
* : The 2SB14512SD2200 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/7039MO, TS No.3151–1/4


Sanyo Electric Components Datasheet

D2200 Datasheet

2SD2200

No Preview Available !

D2200 pdf
2SB1451/2SD2200
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
tstg See specified test circuit.
tf See specified test circuit.
Switching Time Test Circuit
Ratings
min typ
(–)90
(–)80
(–)6
(0.2)
0.1
(0.7)
1.2
(0.2)
0.4
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
No.3151–2/4


Part Number D2200
Description 2SD2200
Maker Sanyo
Total Page 4 Pages
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