N-Channel Junction Silicon FET
General-Purpose Amplifier Applications
· Low-frequency general-purpose amplifiers.
· Ideal for use in variable resistors, analog switches,
low-frequency amplifiers, and constant-current
· Adoption of FBET process.
· Ultrasmall-sized package permitting 2SK1069-
applied sets to be made smaller and slimmer.
0 to 0.1
Absolute Maximum Ratings at Ta = 25˚C
Allowable Power Dissipation
Electrical Characteristics at Ta = 25˚C
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–20V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=10V, VGS=0
VGS(off) VDS=10V, ID=1µA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0, f=1kHz
* : The 2SK1069 is classified by IDSS as follows (unit : mA) :
1.2 3 3.0 2.5 4 6.0 5.0 5 12.0
(Note) Marking : FJ
IDSS rank : 3, 4, 5
• For CP package version, use the 2SK771.
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
–55 to +150
min typ max
1.2* 12.0* mA
–0.3 –0.9 –2.0 V
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/4298TA, TS No.2749–1/3