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Sanyo Electric Components Datasheet

2SK3980 Datasheet

N-Channel Silicon MOSFET General-Purpose Switching Device

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2SK3980 pdf
Ordering number : EN8641
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2SK3980
SANYO Semiconductors
DATA SHEET
2SK3980
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm2!0.8mm)
Tc=25°C
Ratings
60
±10
0.9
3.6
0.9
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : LS
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
ID=0.5A, VGS=4V
ID=0.3A, VGS=2.5V
ID=0.1A, VGS=1.8V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
0.4
0.9
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
1.5 S
635 830 m
705 990 m
850 1310 m
100 pF
9.5 pF
6.7 pF
8.8 ns
10.5
ns
21.5
ns
15.8
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806PA SY IM TC-00000229 No.8641-1/4


Sanyo Electric Components Datasheet

2SK3980 Datasheet

N-Channel Silicon MOSFET General-Purpose Switching Device

No Preview Available !

2SK3980 pdf
www.DaCtaoSnthineueetd4Ufr.ocmompreceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7007A-003
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SK3980
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=4V, ID=0.9A
VDS=30V, VGS=4V, ID=0.9A
VDS=30V, VGS=4V, ID=0.9A
IS=0.9A, VGS=0V
Ratings
min typ max
Unit
2.1 nC
0.39
nC
0.28
nC
0.91
1.2 V
Switching Time Test Circuit
1.5
0.4
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=0.5A
RL=60
D VOUT
2SK3980
P.G 50S
0.75
Bottom View
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
ID -- VDS
0.9
0.8
1.5V
0.7
0.6
0.5
0.4
0.3
0.2
0.1 VGS=1.0V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V IT07898
1.2
VDS=10V
1.0
ID -- VGS
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT07899
No.8641-2/4


Part Number 2SK3980
Description N-Channel Silicon MOSFET General-Purpose Switching Device
Maker Sanyo Semicon Device
Total Page 4 Pages
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