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SavantIC
SavantIC

2SB1106 Datasheet Preview

2SB1106 Datasheet

SILICON POWER TRANSISTOR

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2SB1106 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Complement to type 2SD1606
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SB1106
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-7
-6
40
150
-55~150
UNIT
V
V
V
A
W



SavantIC
SavantIC

2SB1106 Datasheet Preview

2SB1106 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SB1106 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE==
V(BR)EBO Emitter-base breakdown voltage
IE=-50mA, IC=0
VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA
VCEsat-2 Collector-emitter saturation voltage IC=-6A ,IB=-60mA
VBEsat-1 Base-emitter saturation voltage
IC=-3A ,IB=-6mA
VBEsat-2 Base-emitter saturation voltage
IC=-6A ,IB=-60mA
ICBO Collector cut-off current
VCB=-120V, IE=0
ICEO Collector cut-off current
VCE=-100V, RBE==
hFE DC current gain
IC=-3A ; VCE=-3V
VD Diode forward voltage
ID=-6A
Product Specification
2SB1106
MIN TYP. MAX UNIT
-120
V
-7 V
-1.5 V
-3.0 V
-2.0 V
-3.5 V
-100 µA
-10 µA
1000
3.0 V
2


Part Number 2SB1106
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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