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SavantIC
SavantIC

2SC1626 Datasheet Preview

2SC1626 Datasheet

SILICON POWER TRANSISTOR

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2SC1626 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Complement to type 2SA816
APPLICATIONS
·Designed for the driver stages of 30-50W
high-fidelity amplifiers and medium speed
switching up to 2A peak current
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC1626
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
80
80
5
750
2
1.5
10
150
-50~150
UNIT
V
V
V
mA
A
W



SavantIC
SavantIC

2SC1626 Datasheet Preview

2SC1626 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC1626 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SC1626
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
80
V
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ; IE=0
80
V
VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA
0.5 V
VBE Base-emitter on voltage
IC=500m A ; VCE=2V
1.0 V
ICBO Collector cut-off current
VCB=30V ;IE=0
0.5 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
1 µA
hFE-1
DC current gain
IC=150m A ; VCE=2V
70
240
hFE-2
DC current gain
IC=500m A ; VCE=2V
40
fT Transition frequency
IC=150m A ; VCE=2V
50
MHz
Cob Collector output capacitance
IE=0;f=1MHz ; VCB=10V
13 pF
hFE-1 Classifications
OY
70-140 120-240
2


Part Number 2SC1626
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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