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SavantIC
SavantIC

2SC1785 Datasheet Preview

2SC1785 Datasheet

SILICON POWER TRANSISTOR

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2SC1785 pdf
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2SC1785
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
200
200
6
15
4
100
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SC1785 Datasheet Preview

2SC1785 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC1785 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1785
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
200 V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
6V
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A
2.0 V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
2.5 V
ICBO Collector cut-off current
VCB=200V; IE=0
100 µA
IEBO Emitter cut-off current
VEB=6V; IC=0
100 µA
hFE DC current gain
IC=5A ; VCE=4V
20
2


Part Number 2SC1785
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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