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SavantIC
SavantIC

2SC2590 Datasheet Preview

2SC2590 Datasheet

SILICON POWER TRANSISTOR

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2SC2590 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1110
·Excellent current IC characteristics of forward
current transfer ratio hFE vs. collector
·High transition frequency fT
·Optimum for the driver stage of a
40 W to 60 W output amplifier
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SC2590
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
Note) *: Without heat sink
TC=25
VALUE
120
120
5
0.5
1.0
1.2*
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SC2590 Datasheet Preview

2SC2590 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC2590 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2590
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=100µA;IB=0
120
V
V(BR)EBO Emitter-base breakdown voltage
IE=10µA ;IC=0
5
V
VCE(sat) Collector-emitter saturation voltage IC=0.3A ;IB=30mA
VBE(sat) Base-emitter saturation voltage
IC=0.3A ;IB=30mA
hFE-1
DC current gain
IC=150mA ; VCE=10V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
1.0
1.2
90 220
65 100
V
V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
20 pF
fT Transition frequency
IC=50mA ; VCB=10V,f=200MHz 200 MHz
hFE-1 Classifications
QR
90-155
130-220
2


Part Number 2SC2590
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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