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SavantIC
SavantIC

2SD1559 Datasheet Preview

2SD1559 Datasheet

SILICON POWER TRANSISTOR

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2SD1559 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1559
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mP(I) package
·Complement to type 2SB1079
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
100
7
20
30
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

2SD1559 Datasheet Preview

2SD1559 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1559 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1559
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,RBE==
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50mA ,IC=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=20mA
VCEsat -2 Collector-emitter saturation voltage IC=20A; IB=200mA
VBE sat-1 Base-emitter saturation voltage
IC=10A; IB=20mA
VBE sat-2 Base-emitter saturation voltage
IC=20A; IB=200mA
ICBO Collector cut-off current
VCB=100V; IE=0
ICEO Collector cut-off current
VCE=80V; RBE==
hFE DC current gain
IC=10A ; VCE=3V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=10A; IB1=-IB2=20mA
MIN TYP. MAX UNIT
100 V
100 V
7V
2.0 V
3.0 V
2.5 V
3.5 V
100 µA
1.0 mA
1000
20000
1.0 µs
9.0 µs
3.0 µs
2


Part Number 2SD1559
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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