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SavantIC
SavantIC

2SD1669 Datasheet Preview

2SD1669 Datasheet

SILICON POWER TRANSISTOR

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2SD1669 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
www.dat·aCshoemet4pule.cmoment to type 2SB1136
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·For relay drivers,high-speed inverters,
converters,and other general high-current
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SD1669
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
60
50
6
12
15
2
30
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SD1669 Datasheet Preview

2SD1669 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1669 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1669
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=8
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat
ICBO
IEBO
hFE-1
Collector-emitter saturation voltage IC=6A ;IB=0.6A
Collector cut-off current
VCB=40V ;IE=0
Emitter cut-off current
VEB=4V; IC=0
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=5A ; VCE=2V
fT Transition frequency
Switching times
IC=1A ; VCE=5V
ton Turn-on time
ts Storage time
tf Fall time
IC=2.0A;IB1=-IB2=0.2A
VCC=20V;RL=4B
MIN TYP. MAX UNIT
50 V
60 V
6V
0.4 V
100 µA
100 µA
70 280
30
10 MHz
0.10 µs
1.20 µs
0.05 µs
hFE-1 Classifications
QRS
70-140 100-200 140-280
2


Part Number 2SD1669
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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