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SavantIC
SavantIC

2SD1680 Datasheet Preview

2SD1680 Datasheet

SILICON POWER TRANSISTOR

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2SD1680 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1680
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High speed switching
·High VCBO
·Large collector power dissipation
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (Pulse)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
330
200
6
7
10
3
70
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SD1680 Datasheet Preview

2SD1680 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1680 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1680
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=5A; IB=0.5A
VCE=330V; VBE=0
Ta=100
VEB=6V; IC=0
hFE DC current gain
tf Fall time
IC=5A ; VCE=4V
IC=5A
IB1=0.8A,VEB=-5V,RB=0.5>
MIN TYP. MAX UNIT
200 V
330 V
1.0 V
1.2 V
1
15
mA
1 mA
15
0.75 µs
2


Part Number 2SD1680
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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