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SavantIC
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2SD1712 Datasheet Preview

2SD1712 Datasheet

SILICON POWER TRANSISTOR

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2SD1712 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1712
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·Complement to type 2SB1157
·High transition frequency fT
·Satisfactory linearity of hFE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
100
100
5
5
8
60
3
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SD1712 Datasheet Preview

2SD1712 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1712 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1712
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
VBE Base-emitter on voltage
IC=3A ; VCE=5V
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE -2
DC current gain
IC=1A ; VCE=5V
hFE -3
DC current gain
IC=3A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
2.0 V
1.8 V
50 µA
50 µA
20
60 200
20
70 pF
20 MHz
hFE-2 classifications
QS
60-120
80-60
P
100-200
2


Part Number 2SD1712
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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