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SavantIC
SavantIC

2SD1717 Datasheet Preview

2SD1717 Datasheet

SILICON POWER TRANSISTOR

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2SD1717 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1717
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPL package
·Complement to type 2SB1162
·Excellent linearity of hFE
·Wide area of safe operation (ASO)
·High transition frequency fT
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
160
160
5
12
20
3.5
120
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SD1717 Datasheet Preview

2SD1717 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD1717 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE Base-emitter voltage
IC=8A ; VCE=5V
ICBO Collector cut-off current
VCB=160V; IE=0
IEBO Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
hFE-3
DC current gain
fT Transition frequency
COB Collector output capacitance
IC=20mA ; VCE=5V
IC=1A ; VCE=5V
IC=8A ; VCE=5V
IC=0.5A ; VCE=5V
f=1MHz;VCB=10V
hFE-2 classifications
QS
P
60-120 80-160 100-200
Product Specification
2SD1717
MIN TYP. MAX UNIT
2.0 V
1.8 V
50 µA
50 µA
20
60 200
20
20 MHz
210 pF
2


Part Number 2SD1717
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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