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SavantIC
SavantIC

BD939F Datasheet Preview

BD939F Datasheet

SILICON POWER TRANSISTOR

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BD939F pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD939F
DESCRIPTION
www.dat·aWshiethet4Tu.Oco-m220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
100
7
3
6
14
150
-50~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

BD939F Datasheet Preview

BD939F Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BD939F pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD939F
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT Transition frequency
VCB=120V; IE=0
VEB=7V; IC=0
IC=0.2A ; VCE=4V
IC=1A ; VCE=4V
IC=0.25A ; VCE=10V
MIN TYP. MAX UNIT
100 V
7V
0.7 V
1.5 V
50 µA
50 µA
40 250
15
3 MHz
2


Part Number BD939F
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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