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SavantIC
SavantIC

BDT88 Datasheet Preview

BDT88 Datasheet

SILICON POWER TRANSISTOR

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BDT88 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDT88
DESCRIPTION
www.data·sWheietht4uT.cOom-220C package
·Complement to type BDT87
APPLICATIONS
·Intented for use in power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IB Base current
PC
Collector power dissipation
TC-25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-120
-120
-5
-15
-5
125
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.38
UNIT
/W



SavantIC
SavantIC

BDT88 Datasheet Preview

BDT88 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDT88 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDT88
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-7 A;IB=-0.7 A
VBE Base-emitter voltage
IC=-5A ; VCE=-4V
ICBO Collector cut-off current
VCB=-120V; IE=0
ICEO Collector cut-off current
VCE=-60V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
hFE-2
DC current gain
IC=-5A ; VCE=-4V
hFE-3
DC current gain
IC=-10A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-120
V
-1.6 V
-1.5 V
-0.5 mA
-1.0 mA
-1.0 mA
40 250
40
5
20 MHz
2


Part Number BDT88
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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