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SavantIC
SavantIC

BDV67C Datasheet Preview

BDV67C Datasheet

SILICON POWER TRANSISTOR

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BDV67C pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV67/67A/67B/67C/67D
DESCRIPTION
·With TO-3PN package
www.dat·aCshoemet4pule.cmoment to type BDV66/66A/66B/66C/66D
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in audio output stages and general
amplifier and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDV67
BDV67A
VCBO
Collector-base voltage BDV67B
BDV67C
BDV67D
BDV67
BDV67A
VCEO
Collector-emitter voltage BDV67B
BDV67C
BDV67D
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
100
120
140
160
60
80
100
120
150
5
16
20
0.5
200
150
-65~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

BDV67C Datasheet Preview

BDV67C Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDV67C pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV67/67A/67B/67C/67D
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BDV67
V(BR)CEO
Collector-emitter
breakdown voltage
BDV67A
BDV67B IC=30mA, IB=0
BDV67C
BDV67D
VCEsat
VBE
ICBO
ICEO
IEBO
hFE-1
hFE-2
hFE-3
CC
VF
ton
toff
Collector-emitter saturation voltage IC=10A ,IB=40mA
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
IC=10A ; VCE=3V
VCB=VCBOmax, IE=0
VCB=1/2VCBOmax; Tj=150
VCE=1/2VCEOmax, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=1A ; VCE=3V
DC current gain
IC=10A ; VCE=3V
DC current gain
IC=16A ; VCE=3V
Collector capacitance
IE=0 ; VCB=10V;f=1MHz
Diode forward voltage
IE=10A
Turn-on time
Turn-off time
IC = 10 A, IB1 =-IB2=40 mA
VCC = 12V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb Thermal resistance junction to mounting base
MIN TYP. MAX UNIT
60
80
100 V
120
150
2.0 V
2.5 V
1.0
4.0
mA
1 mA
5 mA
3000
1000
1000
300 pF
3.0 V
1.0 µs
3.5 µs
MAX
0.625
UNIT
K/W
2


Part Number BDV67C
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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