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SavantIC
SavantIC

BDW47 Datasheet Preview

BDW47 Datasheet

SILICON POWER TRANSISTOR

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BDW47 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW47
DESCRIPTION
www.dat·aWshieteht4TuO.co-m220C package
·Complement to type BDW42
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For general purpose and low speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current-DC
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
-100
-100
-5
-15
-0.5
85
150
-55~150
UNIT
V
V
V
A
A
W
MAX
1.47
UNIT
/W



SavantIC
SavantIC

BDW47 Datasheet Preview

BDW47 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDW47 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW47
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA, IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-10mA
VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-50mA
VBE Base-emitter on voltage
IC=-10A ; VCE=-4V
ICBO Collector cut-off current
VCB=-100V, IE=0
ICEO Collector cut-off current
VCE=-50V, IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
fT Transition frequency
IC=-3A ; VCE=-3V;f=1MHz
COB Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
MIN TYP. MAX UNIT
-100
V
-2.0 V
-3.0 V
-3.0 V
-1.0 mA
-2.0 mA
-2.0 mA
1000
250
4.0 MHz
300 pF
2


Part Number BDW47
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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