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SavantIC
SavantIC

BDW52C Datasheet Preview

BDW52C Datasheet

SILICON POWER TRANSISTOR

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BDW52C pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW52C
DESCRIPTION
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·With TO-3 package
·Complement to type BDW51C
·Excellent safe operating area
APPLICATIONS
·For use in power linear and
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-100
-100
-5
-15
-20
-7
125
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.4
UNIT
/W



SavantIC
SavantIC

BDW52C Datasheet Preview

BDW52C Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDW52C pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-2.5A
VBEsat
Base-emitter saturation voltage
IC=-10A; IB=-2.5A
VBE Base-emitter on voltage
IC=-5A ; VCE=-4V
ICEO Collector cut-off current
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCE=-50V; IB=0
VCB=-100V; IE=0
TC=150
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-4V
Product Specification
BDW52C
MIN TYP. MAX UNIT
-100
V
-1.0 V
-3.0 V
-2.5 V
-1.5 V
-1.0 mA
-0.5
-5.0
mA
-2.0 mA
20 150
5
3 MHz
2


Part Number BDW52C
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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