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SavantIC
SavantIC

BDW83A Datasheet Preview

BDW83A Datasheet

SILICON POWER TRANSISTOR

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BDW83A pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW83/83A/83B/83C/83D
DESCRIPTION
·With TO-3PN package
www.dat·aCshoemet4pule.cmoment to type BDW84/84A/84B/84C/84D
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in power linear and switching
applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDW83
BDW83A
VCBO
Collector-base voltage BDW83B
BDW83C
BDW83D
BDW83
BDW83A
VCEO
Collector-emitter voltage BDW83B
BDW83C
BDW83D
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
150
-65~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

BDW83A Datasheet Preview

BDW83A Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDW83A pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW83/83A/83B/83C/83D
CHARACTERISTICS
Tj=25 unless otherwise specified
www.dataSsYhMeeBt4Ou.Lcom
PARAMETER
BDW83
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BDW83A
BDW83B IC=30mA, IB=0
BDW83C
BDW83D
VCEsat-1 Collector-emitter saturation voltage IC=6A ,IB=12mA
VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA
VBE Base-emitter on voltage
IC=6A ; VCE=3V
ICBO
Collector
cut-off current
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCB=45V, IE=0
TC=150
VCB=60V, IE=0
TC=150
VCB=80V, IE=0
TC=150
VCB=100V, IE=0
TC=150
VCB=120V, IE=0
TC=150
BDW83
VCE=30V, IB=0
ICEO
Collector
cut-off current
BDW83A VCE=30V, IB=0
BDW83B VCE=40V, IB=0
BDW83C VCE=50V, IB=0
BDW83D VCE=60V, IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=6A ; VCE=3V
hFE-2
DC current gain
IC=15A ; VCE=3V
VEC Diode forward voltage
IE=15A
ton Turn-on time
toff Turn-off time
IC = 10 A, IB1 =-IB2=40 mA
RL=3B; VBE(off) = -4.2V
Duty CycleC2%
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
MIN TYP. MAX UNIT
45
60
80 V
100
120
2.5 V
4.0 V
2.5 V
0.5
5.0
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1 mA
2 mA
750 20000
100
3.5 V
0.9 µs
7.0 µs
MAX
0.83
UNIT
/W


Part Number BDW83A
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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