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SavantIC
SavantIC

BDW84D Datasheet Preview

BDW84D Datasheet

SILICON POWER TRANSISTOR

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BDW84D pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW84/84A/84B/84C/84D
DESCRIPTION
·With TO-3PN package
www.dat·aCshoemet4pule.cmoment to type BDW83/83A/83B/83C/83D
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in power linear and switching
applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDW84
BDW84A
VCBO
Collector-base voltage BDW84B
BDW84C
BDW84D
BDW84
BDW84A
VCEO
Collector-emitter voltage BDW84B
BDW84C
BDW84D
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-15
-0.5
150
3.5
150
-65~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

BDW84D Datasheet Preview

BDW84D Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDW84D pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW84/84A/84B/84C/84D
CHARACTERISTICS
Tj=25 unless otherwise specified
www.dataSsYhMeeBt4Ou.Lcom
PARAMETER
BDW84
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
BDW84A
BDW84B IC=-30mA, IB=0
BDW84C
BDW84D
VCEsat-1 Collector-emitter saturation voltage IC=-6A ,IB=-12mA
VCEsat-2 Collector-emitter saturation voltage IC=-15A ,IB=-150mA
VBE Base-emitter on voltage
IC=-6A ; VCE=-3V
ICBO
Collector
cut-off current
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
VCB=-45V, IE=0
TC=150
VCB=-60V, IE=0
TC=150
VCB=-80V, IE=0
TC=150
VCB=-100V, IE=0
TC=150
VCB=-120V, IE=0
TC=150
BDW84
VCE=-30V, IB=0
ICEO
Collector
cut-off current
BDW84A VCE=-30V, IB=0
BDW84B VCE=-40V, IB=0
BDW84C VCE=-50V, IB=0
BDW84D VCE=-60V, IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-6A ; VCE=-3V
hFE-2
DC current gain
IC=-15A ; VCE=-3V
VEC Diode forward voltage
IE=-15A
ton Turn-on time
toff Turn-off time
IC =-10 A, IB1 =-IB2=-40 mA
RL=3B; VBE(off) =4.2V
Duty CycleC2%
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
MIN
-45
-60
-80
-100
-120
TYP.
MAX UNIT
V
-2.5 V
-4.0 V
-2.5 V
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
-1 mA
-2 mA
750 20000
100
-3.5 V
0.9 As
7.0 As
MAX
0.83
UNIT
/W


Part Number BDW84D
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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