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SavantIC
SavantIC

BDX18 Datasheet Preview

BDX18 Datasheet

SILICON POWER TRANSISTOR

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BDX18 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX18
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High switching speed
APPLICATIONS
·LF large signal power amplification
·Suitable for series and shunt regulators, high
fidelity amplifiers and power switching circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-60
-7
-15
-7
117
-65~200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.5
UNIT
/W



SavantIC
SavantIC

BDX18 Datasheet Preview

BDX18 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDX18 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX18
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0
V(BR) EBO Emitter-base breakdown voltage
IE=-1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE Base-emitter voltage
ICEX Collector cut-off current
IEBO Emitter cut-off current
IC=-4A;VCE=-4V
VCE=-90V;VBE=1.5V
VCE=-60V;VBE=1.5V;TC=150
VEB=-7V; IC=0
hFE DC current gain
IC=-4A ; VCE=-4V
fT Transition frequency
IC=-1A ; VCE=-10V;f=1MHz
MIN TYP. MAX UNIT
-60 V
-7 V
-1.1 V
-1.8 V
-5
-10
mA
-5 mA
20 70
4 MHz
2


Part Number BDX18
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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