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SavantIC
SavantIC

BDX65B Datasheet Preview

BDX65B Datasheet

SILICON POWER TRANSISTOR

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BDX65B pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX65B
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·DARLINGTON
·Complement to type BDX64B
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current(peak)
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
100
5
12
16
0.2
117
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.5
UNIT
/W



SavantIC
SavantIC

BDX65B Datasheet Preview

BDX65B Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDX65B pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX65B
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=5A ;IB=20mA
VBE Base-emitter on voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
IEBO Emitter cut-off current
IC=5A;VCE=3V
VCB=100V; IE=0
TC=150
VCE=50V; IB=0
VEB=5V; IC=0
VF Diode forward voltage
IF=3A
hFE-1
hFE-2
hFE-3
fT
DC current gain
DC current gain
DC current gain
Transition frequency
IC=1A ; VCE=3V
IC=5A ; VCE=3V
IC=10A ; VCE=3V
IC=5A ; VCE=3V
MIN TYP. MAX UNIT
100 V
2V
3V
0.4
3
mA
1 mA
5 mA
1.8 V
1500
1000
1500
7 MHz
2


Part Number BDX65B
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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