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SavantIC
SavantIC

BDX66C Datasheet Preview

BDX66C Datasheet

SILICON POWER TRANSISTOR

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BDX66C pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX66C
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·DARLINGTON
·High current
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM Collector current(peak)
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-5
-16
-20
-0.25
150
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.17
UNIT
/W



SavantIC
SavantIC

BDX66C Datasheet Preview

BDX66C Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDX66C pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX66C
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH
VCEsat
ICBO
ICEO
Collector-emitter saturation voltage IC=-10A ;IB=-40mA
Collector cut-off current
VCB=-70V; IE=0
TC=150
Collector cut-off current
VCE=-60V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
Switching times
ton Turn-on time
toff Turn-off time
IC=-10A ;
IB1=-IB2=0.04A
VCC=12V ;
MIN TYP. MAX UNIT
-120
V
-2 V
-1
-5
mA
-3 mA
-5 mA
1.0 µs
3.5 µs
2


Part Number BDX66C
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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