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SavantIC
SavantIC

BDY55 Datasheet Preview

BDY55 Datasheet

SILICON POWER TRANSISTOR

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BDY55 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY55
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High current capability
·Fast switching speed
APPLICATIONS
·LF large signal power amplification.
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
100
60
7
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
MAX
1.5
UNIT
/W



SavantIC
SavantIC

BDY55 Datasheet Preview

BDY55 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDY55 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDY55
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A
VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A
VBE Base-emitter on voltage
ICEX Collector cut-off current
ICEO Collector cut-off current
IC=4 A; VCE=4V
VCE=100V; VBE=-1.5V
TC=150
VCE=30V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=4V
hFE-2
DC current gain
IC=10A ; VCE=4V
fT Transition frequency
IC=1A ; VCE=4V;f=10MHz
MIN TYP. MAX UNIT
60 V
1.1 V
2.5 V
1.8 V
5.0
30
mA
0.7 mA
5.0 mA
20 70
10
10 MHz
2


Part Number BDY55
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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