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SavantIC
SavantIC

BU133 Datasheet Preview

BU133 Datasheet

SILICON POWER TRANSISTOR

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BU133 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU133
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High voltage ,high speed
APPLICATIONS
·Intended for operating in color TV
receiver’s chopper supplies
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=50
MAX
750
250
7
3
30
200
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
2.33
UNIT
/W



SavantIC
SavantIC

BU133 Datasheet Preview

BU133 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BU133 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU133
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.5A
ICBO Collector cut-off current
VCB=750V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=0.2A ; VCE=10V
MIN TYP. MAX UNIT
250 V
7V
1.5 V
1.4 V
0.1 mA
0.1 mA
15 80
8 MHz
2


Part Number BU133
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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