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SavantIC
SavantIC

BU208D Datasheet Preview

BU208D Datasheet

SILICON POWER TRANSISTOR

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BU208D pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
www.dat·aBshueilett-4inu.cdoammper diode
·High voltage capability
APPLICATIONS
·For use in horizontal deflection output
stages for color TV receives.
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
BU208D
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
1500
700
10
8
15
150
175
-65~175
UNIT
V
V
V
A
A
W
MAX
1.0
UNIT
K/W



SavantIC
SavantIC

BU208D Datasheet Preview

BU208D Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BU208D pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU208D
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS Collector-emitter sustaining voltage IC=0.1A; IB=0;
VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5 A;IB=2 A
VCE=1500V;VBE=0
Tj=125
VEB=5V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
VF Diode forward voltage
IF=4A
fT Transition frequency
IC=0.1A ; VCE=5V
ts Storage time
tf Fall time
IC=4.5A;IB=1.8A;VCC=140V
LC=0.9Mh;LB=3µH
700 V
1.0 V
1.3 V
1.0
2.0
mA
300 mA
8
2.0 V
7 MHz
7 µs
0.55 µs
2


Part Number BU208D
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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