http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





SavantIC
SavantIC

BU326A Datasheet Preview

BU326A Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BU326A pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU326 BU326A
DESCRIPTION
www.data·sWheietht4uT.cOom-3 package
·High voltage;high speed
·Low collector saturation voltage.
APPLICATIONS
·Intended for operating in CTV receiver’s
chopper supplies.
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BU326
BU326A
Open emitter
VCEO
Collector-emitter voltage
BU326
BU326A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
800
900
375
400
10
6
8
3
75
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
2.33
UNIT
/W



SavantIC
SavantIC

BU326A Datasheet Preview

BU326A Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BU326A pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU326 BU326A
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BU326
BU326A
IC=0.1A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2.5 A;IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=4A;IB=1.25 A
VBEsat-1 Base-emitter saturation voltage
IC=2.5 A;IB=0.5A
VBEsat-2 Base-emitter saturation voltage
IC=4A;IB=1.25 A
BU326 VCE=800V;VBE=0
ICES Collector cut-off current
BU326A VCE=900V;VBE=0
IEBO Emitter cut-off current
VEB=10V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=0.2A ; VCE=10V; f=1MHz
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=2.5A ;
IB1=0.5A;IB2=-1A
VCC=250V ;
MIN TYP. MAX UNIT
375
V
400
1.5 V
3.0 V
1.4 V
1.6 V
1 mA
25
4.0
10 mA
MHz
0.5 µs
3.5 µs
0.5 µs
2


Part Number BU326A
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
PDF Download
BU326A pdf
Download PDF File
BU326A pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 BU326 POWER TRANSISTORS(6A/375-400V/75W) Mospec Semiconductor
Mospec Semiconductor
BU326 pdf
2 BU326 HIGH VOLTAGE POWER TRANSISTORS Boca Semiconductor Corporation
Boca Semiconductor Corporation
BU326 pdf
3 BU326 SILICON POWER TRANSISTOR SavantIC
SavantIC
BU326 pdf
4 BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR ST Microelectronics
ST Microelectronics
BU326A pdf
5 BU326A NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Wing Shing Computer Components
Wing Shing Computer Components
BU326A pdf
6 BU326A NPN SILICON POWER TRANSISTOR Siemens Semiconductor Group
Siemens Semiconductor Group
BU326A pdf
7 BU326A POWER TRANSISTORS(6A/375-400V/75W) Mospec Semiconductor
Mospec Semiconductor
BU326A pdf
8 BU326A HIGH VOLTAGE POWER TRANSISTORS Boca Semiconductor Corporation
Boca Semiconductor Corporation
BU326A pdf
9 BU326A SILICON POWER TRANSISTOR SavantIC
SavantIC
BU326A pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components