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SavantIC
SavantIC

BU406D Datasheet Preview

BU406D Datasheet

(BU406D / BU407D) SILICON POWER TRANSISTOR

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BU406D pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU406D BU407D
DESCRIPTION
·With TO-220C package
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·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolut maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BU406D
BU407D
VCEO
Collector-emitter voltage
BU406D
BU407D
VEBO
IC
ICM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
IB Base current
Ptot Total power dissipation
Tj Maximum operating junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
400
330
200
150
6
7
10
4
60
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.08
UNIT
/W



SavantIC
SavantIC

BU406D Datasheet Preview

BU406D Datasheet

(BU406D / BU407D) SILICON POWER TRANSISTOR

No Preview Available !

BU406D pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU406D BU407D
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BU406D
BU407D
IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=0.65A
ICEV
Collector
cut-off current
BU406D VCE=400V; VBE=-1.5V
BU407D VCE=330V; VBE=-1.5V
IEBO Emitter cut-off current
VEB=6.0V; IC=0
hFE DC current gain
IC=2A ; VCE=5V
VF Diode forward voltage
fT Transition frequency
tf Fall time
IF=5A
IC=0.5A ;VCE=10V;f=1.0MHz
IC=5A ;VCC=40V
IBend=0.65A
MIN TYP. MAX UNIT
200
V
150
1.0 V
1.3 V
15 mA
400 mA
15
1.5 V
10 MHz
0.75 µs
2


Part Number BU406D
Description (BU406D / BU407D) SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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BU406D pdf
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