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SavantIC
SavantIC

D1666 Datasheet Preview

D1666 Datasheet

2SD1666

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D1666 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
www.dat·aCshoemet4pule.cmoment to type 2SB1133
·High reliability
·Wide area of safe operation
APPLICATIONS
·For low-frequency and general-purpose
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SD1666
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
MAX
60
60
6
3
8
2
25
150
-40~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

D1666 Datasheet Preview

D1666 Datasheet

2SD1666

No Preview Available !

D1666 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1666
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE Base-emitter on voltage
IC=0.5A ; VCE=5V
ICBO Collector cut-off current
VCB=40V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
60 V
60 V
6V
0.6 1.0
V
0.7 1.0
V
100 µA
100 µA
70 280
20
60 pF
8 MHz
hFE-1 Classifications
QR
S
70-140 100-200 140-280
2


Part Number D1666
Description 2SD1666
Maker SavantIC
Total Page 4 Pages
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