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SMS2312 Datasheet Preview

SMS2312 Datasheet

N-Channel Enhancement Mode Power MOSFET

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SMS2312 pdf
Elektronische Bauelemente
SMS2312
5A , 20V , RDS(ON) 32 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2312 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
S12
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Top View
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current (t5s)
ID 5
Pulsed Drain Current
IDM 20
Maximum Power Dissipation (t5s)
PD 0.35
Thermal Resistance Junction-Ambient
RθJA
357
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
A
A
mW
°C / W
°C
http://www.SeCoSGmbH.com/
25-Nov-2014 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 3



SeCoS
SeCoS

SMS2312 Datasheet Preview

SMS2312 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

SMS2312 pdf
Elektronische Bauelemente
SMS2312
5A , 20V , RDS(ON) 32 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage Current
BVDSS
VGS(th)
IGSS
20 - - V VGS=0, ID=250μA
0.45 - 1 V VDS=VGS, ID=250μA
-
-
±100
nA VGS= ±8V, VDS=0
Drain-Source Leakage Current
Forward Transconductance 1
Diode Forward Voltage
IDSS - - 1 μA VDS=20V, VGS=0
gfs 6 - - S VDS=10V, ID=5A
VSD - 0.75 1.2 V IS=4A, VGS=0
Static Drain-Source On-Resistance 1
- - 32
VGS=4.5V, ID=5A
RDS(ON) - - 36 mVGS=2.5V, ID=4.7A
- - 42
VGS=1.8V, ID=4.3A
Switching Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Ciss
Coss
Crss
Td(on)
Tr
Td(off)
Tf
- 865 -
- 105 -
- 55 -
- 10 -
- 20 -
- 32 -
- 12 -
VGS =0
pF VDS=10V
f =1.0MHz
VDD=10V
VGEN=5V
nS RG=1
RL=2.2
ID=4A
Gate Resistance
Rg
Note:
1. Pulse Test : Pulse Width300µs, Duty Cycle 2%.
2. These parameters have no way to verify.
0.5 - 4.8 f =1.0MHz
http://www.SeCoSGmbH.com/
25-Nov-2014 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SMS2312
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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