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Seme LAB
Seme LAB

IRFNJ9130SMD05 Datasheet Preview

IRFNJ9130SMD05 Datasheet

P-CHANNEL POWER MOSFET

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IRFNJ9130SMD05 pdf
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IRFNJ9130
IRF9130SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
2.41 (0.095)
13
0.127 (0.005)
3.175 (0.125)
Max.
2
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
-100V
-11A
0.30
16 PLCS
0.50(0.020)
0.127 (0.005)
7.26 (0.286)
0.127 (0.005)
0.50 (0.020)
max.
SMD05 (TO-276AA)
IRF9130SMD05
PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE
IRFNJ9130
PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
-11A
ID Continuous Drain Current @ Tcase = 100°C
-7A
IDM Pulsed Drain Current
-50A
PD Power Dissipation @ Tcase = 25°C
45W
Linear Derating Factor
0.36W/°C
TJ , Tstg
RθJC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
–55 to 150°C
2.8°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5544
Issue 1



Seme LAB
Seme LAB

IRFNJ9130SMD05 Datasheet Preview

IRFNJ9130SMD05 Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

IRFNJ9130SMD05 pdf
www.DataSheet4U.com
IRFNJ9130
IRF9130SMD05
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain Source Breakdown Voltage VGS = 0
ID = -1mA
BVDSS Temperature Coefficient of
Reference to 25°C
TJ Breakdown Voltage
ID = -1mA
Static Drain Source OnState
RDS(on) Resistance
VGS = -10V
VGS = -10V
ID = -7A
ID = -11A
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = -250µA
gfs Forward Transconductance
VDS -15V
IDS = -7A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = -80V
TJ = 125°C
IGSS Forward Gate Source Leakage
VGS = -20V
IGSS Reverse Gate Source Leakage
VGS = 20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg Total Gate Charge
VGS = -10V
Qgs Gate Source Charge
VDS = -50V
Qgd Gate Drain (Miller) Charge
ID = -11A
td(on) TurnOn Delay Time
VDD = -50V
tr Rise Time
ID = -11A
td(off) TurnOff Delay Time
RG = 7.5
tf Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current
VSD Diode Forward Voltage
IS = -11A
VGS = 0
TJ = 25°C
trr Reverse Recovery Time
IS = -11A
TJ = 25°C
Qrr Reverse Recovery Charge
di / dt -100A/µs VDD 150V
-100
-2
3
Typ.
-0.1
860
350
125
Max. Unit
V
V/°C
0.30
0.35
-4
-25
-250
-100
100
V
S((ΩΩ)
µA
nA
pF
29
7.1 nC
21
60
140
ns
140
140
-11
A
-50
-4.7 V
250 ns
3 µC
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5544
Issue 1


Part Number IRFNJ9130SMD05
Description P-CHANNEL POWER MOSFET
Maker Seme LAB
Total Page 2 Pages
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IRFNJ9130SMD05 pdf
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