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Seme LAB
Seme LAB

IRFY1310M-T257 Datasheet Preview

IRFY1310M-T257 Datasheet

N-CHANNEL POWER MOSFET

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IRFY1310M-T257 pdf
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IRFY1310M-T257
MECHANICAL DATA
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56
3.81
(0.140)
(0.150)
Dia.
123
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDS
ID(max)
RDS(on)
100V
14A
.055W
2.54 (0.100)
BSC
0.64
0.89
(0.025)
(0.035)
Dia.
3.05 (0.120)
BSC
TO257AA – Metal Package
Pin 1 Drain
Pin 2 Source
Pin 3 Gate
FEATURES
• HERMETICALLY SEALED TO257 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current (VGS = 0 , Tcase = 25°C)
34A
ID Continuous Drain Current (VGS = 0 , Tcase = 100°C)
21A
IDM Pulsed Drain Current 1
136A
PD Power Dissipation @ Tcase = 25°C
100W
Linear Derating Factor
0.8W/°C
TJ , Tstg
TL
RqJC
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
–55 to 150°C
300°C
1.25°C/W max.
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99



Seme LAB
Seme LAB

IRFY1310M-T257 Datasheet Preview

IRFY1310M-T257 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

IRFY1310M-T257 pdf
www.DataSheet4U.com
IRFY1310M-T257
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
BVDSS
VGS(th)
IGSS
IGSS
SPTaAraTmICeEteLrECTRICAL RATINGS
Drain Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
IDSS Zero Gate Voltage Drain Current
Static Drain Source OnState
VDS(on) Voltage1
Test Conditions
VGS = 0
ID = 250mA
VDS = VGS
ID = 250mA
VGS £ 20V
VGS = -20V
VDS = Max Rate,VGS = 0V
VDS = 0.8 Max Rate, VGS = 0V
TC = 125°C
VGS = 10V
ID = 22A
RDS(on) Static Drain Source OnState
Resistance1
VGS = 10V
ID = 22A
DYNAMIC CHARACTERISTICS
Gfs Forward Transductance 1
VDS = 25V
ID = 22A
Ciss Input Capacitance
VGS = 0V
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
F = 1MHz
td(on) TurnOn Delay Time
tr Rise Time
VDD = 50V
ID = 22A
td(off) TurnOff Delay Time
RG = 3.6W
RD = 2.9W
tf Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
IS (Body Diode)
ISM Source Current1 (Body Diode)
Modified MOSPOWER
smbol showing
the integral P-N
/
Junction rectifier
,
5
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 22A ,VGS = 0V, TC = 25°C
TJ = 25°C
IF =22A
di / dt = 100A/ms
Min.
100
2.0
14
Typ.
0.1
0.2
1.10
1900
450
230
11
56
45
40
180
1.2
Max. Unit
4.0
100
-100
0.25
1.0
V
nA
mA
1.30 V
0.55
W
S
pF
ns
34
A
112
1.3 V
270 ns
1.8 mc
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99


Part Number IRFY1310M-T257
Description N-CHANNEL POWER MOSFET
Maker Seme LAB
Total Page 2 Pages
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