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HFP10N60 Datasheet Preview

HFP10N60 Datasheet

N-Channel MOSFET

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HFP10N60 pdf
HFP10N60
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 15 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V
Nov 2005
BVDSS = 600 V
RDS(on) typ = 0.64 Ω
ID = 9.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
9.5
6.03
38
±30
520
9.5
15.6
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
156
1.25
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2005



SemiHow
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HFP10N60 Datasheet Preview

HFP10N60 Datasheet

N-Channel MOSFET

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HFP10N60 pdf
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 4.75 A
2.5 -- 4.5
-- 0.64 0.8
V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS
/ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
-- -- V
0.65 -- V/℃
-- 1
-- 10
-- 100
-- -100
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1300 1700
-- 110 145
-- 23 30
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 9.5 A,
RG = 25
-- 27 55
-- 75 150
-- 120 240
(Note 4,5)
--
80 160
VDS = 480V, ID = 9.5 A,
-- 33 43 nC
VGS = 10 V
-- 7.3 -- nC
(Note 4,5) -- 15 -- nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
-- 9.5
-- 38
-- 1.4
430 --
5.8 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=10.56mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD9.5A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2005


Part Number HFP10N60
Description N-Channel MOSFET
Maker SemiHow
Total Page 9 Pages
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