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HFS5N60S Datasheet Preview

HFS5N60S Datasheet

N-Channel MOSFET

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HFS5N60S pdf
Aug 2007
HFS5N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 2.0 ȍ
ID = 4.5 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 10.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 2.0 ȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
4.5*
2.6*
18*
ρ30
210
4.5
10
4.5
PD Power Dissipation (TC = 25)
- Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
33
0.26
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.79
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͨ͡͡



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HFS5N60S Datasheet

N-Channel MOSFET

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HFS5N60S pdf
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 2.25 A
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 4.5 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 480V, ID = 4.5 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 4.5 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
2.0 2.5
V
ש
-- -- V
0.6 -- ·͠ఁ
-- 1
-- 10
-- 100
-- -100
520 680
60 80
8.0 10.5
11 33
45 90
40 88
48 100
10.5 13.5
2.5 --
4.0 --
Οʹ
Οʹ
Οʹ
-- 4.5
-- 18
-- 1.4
300 --
2.2 --
A
V
ȝC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=18.9mH, IAS=4.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”4.5A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ” 300ȝs, Duty Cycle ” 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͨ͡͡


Part Number HFS5N60S
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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