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Semikron Electronic Components Datasheet

SEMIX303GD12VC Datasheet

High short circuit capability

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SEMIX303GD12VC pdf
SEMiX303GD12Vc
SEMiX® 33c
SEMiX303GD12Vc
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0
RGoff,main = 1,0
RG,X = 2,2
RE,X = 1,0
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 600 V
VGE 15 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
Tterminal = 80 °C
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 300 A
VGE = ±15 V
RG on = 2.1
RG off = 2.1
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4200 A/µs Tj = 150 °C
di/dtoff = 2600 A/µs
du/dtoff = 6600 V/ Tj = 150 °C
µs
per IGBT
Values
1200
448
342
300
900
-20 ... 20
10
-40 ... 175
327
244
300
900
1485
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.75 2.2 V
2.2 2.5 V
0.94 1.04 V
0.88 0.98 V
2.7 3.9 m
4.4 5.1 m
5.5 6 6.5 V
0.1 0.3 mA
mA
18.0 nF
1.77 nF
1.77 nF
3300
nC
2.50
470 ns
72 ns
26.5 mJ
665 ns
109 ns
36.3 mJ
0.1 K/W
GD
© by SEMIKRON
Rev. 2 – 16.02.2011 Free Datasheet http://www.datasheet4u.c1om/


Semikron Electronic Components Datasheet

SEMIX303GD12VC Datasheet

High short circuit capability

No Preview Available !

SEMIX303GD12VC pdf
SEMiX303GD12Vc
SEMiX® 33c
SEMiX303GD12Vc
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0
RGoff,main = 1,0
RG,X = 2,2
RE,X = 1,0
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 4600 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms to heat sink (M5)
Mt to terminals (M6)
min.
1.1
0.7
2.7
3.5
3
2.5
typ.
2.2
2.2
1.3
0.9
3.0
4.2
283
52
21.4
20
0.7
1
0.014
max.
2.52
2.5
1.5
1.1
3.4
4.6
0.19
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
900
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g
K
GD
2
Rev. 2 – 16.02.2011
© by SEMIKRON


Part Number SEMIX303GD12VC
Description High short circuit capability
Maker Semikron
Total Page 5 Pages
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