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Semikron Electronic Components Datasheet

SEMIX653GAR176HDS Datasheet

Trench IGBT Modules

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SEMIX653GAR176HDS pdf
SEMiX653GAR176HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX653GAR176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 1000 V
VGE 20 V
VCES 1700 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 18 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1700
619
438
450
900
-20 ... 20
10
-55 ... 150
545
365
450
900
2900
-40 ... 150
545
365
450
900
2900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
2
2.45
1
0.9
2.2
3.4
5.8
39.6
1.65
1.31
4200
1.67
max. Unit
2.45
2.9
1.2
1.1
2.8
4.0
6.4
3
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAR
© by SEMIKRON
Rev. 1 – 24.06.2010
1
Free Datasheet http://www.datasheet4u.com/


Semikron Electronic Components Datasheet

SEMIX653GAR176HDS Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX653GAR176HDS pdf
SEMiX653GAR176HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX653GAR176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 1200 V
IC = 450 A
RG on = 3.6
RG off = 3.6
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Eoff Tj = 125 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 450 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Rth(j-c)
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 4200 A/µs
VGE = -15 V
VCC = 1200 V
Tj = 125 °C
Tj = 125 °C
per diode
Freewheeling diode
VF = VEC
IF = 450 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 4200 A/µs
VGE = -15 V
VCC = 1200 V
Tj = 125 °C
Tj = 125 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
290 ns
90 ns
300 mJ
975 ns
190 ns
180 mJ
0.054 K/W
1.7 1.90 V
1.7 1.9 V
0.9 1.1 1.3 V
0.7 0.9 1.1 V
1.3 1.3 1.3 m
1.8 1.8 1.8 m
380 A
130 µC
73 mJ
0.11 K/W
1.7 1.9 V
1.7 1.9 V
0.9 1.1 1.3 V
0.7 0.9 1.1 V
1.3 1.3 1.3 m
1.8 1.8 1.8 m
380 A
130 µC
73 mJ
0.11 K/W
20 nH
0.7 m
1 m
0.04 K/W
3 5 Nm
2.5 5 Nm
Nm
300 g
493 ± 5%
3550
±2%
K
GAR
2
Rev. 1 – 24.06.2010
© by SEMIKRON
Free Datasheet http://www.datasheet4u.com/


Part Number SEMIX653GAR176HDS
Description Trench IGBT Modules
Maker Semikron
Total Page 5 Pages
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