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Semikron Electronic Components Datasheet

SEMIX302GAR12E4S Datasheet

Trench IGBT Modules

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SEMIX302GAR12E4S pdf
SEMiX302GAR12E4s
SEMiX®2s
Trench IGBT Modules
SEMiX302GAR12E4s
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5
RGoff,main = 0,5
RG,X = 2,2
RE,X = 0,5
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
463
356
300
900
-20 ... 20
10
-40 ... 175
356
266
300
900
1620
-40 ... 175
356
266
300
900
1620
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
3.3
5.0
5.8
0.1
18.6
1.16
1.02
1700
2.50
max. Unit
2.05
2.4
0.9
0.8
3.8
5.3
6.5
0.3
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAR
© by SEMIKRON
Rev. 1 – 20.02.2009
1


Semikron Electronic Components Datasheet

SEMIX302GAR12E4S Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX302GAR12E4S pdf
SEMiX302GAR12E4s
SEMiX®2s
Trench IGBT Modules
SEMiX302GAR12E4s
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5
RGoff,main = 0,5
RG,X = 2,2
RE,X = 0,5
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Conditions
VCC = 600 V
IC = 300 A
Tj = 150 °C
Tj = 150 °C
RG on = 1.9
RG off = 1.9
Tj = 150 °C
Tj = 150 °C
di/dton = 5000 A/µs Tj = 150 °C
di/dtoff = 2800 A/µs Tj = 150 °C
per IGBT
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 4300 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Freewheeling diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Rth(j-c)
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 4300 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
282 ns
60 ns
30 mJ
564 ns
117 ns
44 mJ
0.096 K/W
2.1 2.46 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
2.2 2.8 3.2 m
3.3 3.9 4.3 m
230 A
50 µC
19 mJ
0.17 K/W
2.1 2.5 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
2.2 2.8 3.2 m
3.3 3.9 4.3 m
230 A
50 µC
19 mJ
0.17 K/W
18 nH
0.7 m
1 m
0.045
K/W
3 5 Nm
2.5 5 Nm
Nm
250 g
493 ± 5%
3550
±2%
K
GAR
2
Rev. 1 – 20.02.2009
© by SEMIKRON


Part Number SEMIX302GAR12E4S
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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