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Semikron Electronic Components Datasheet

SEMIX302GB066HDS Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX302GB066HDS pdf
SEMiX302GB066HDs
SEMiX®2s
Trench IGBT Modules
SEMiX302GB066HDs
wwPwr.eDlaimtainShaereytD4Ua.ctaom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE 15 V
Tj = 150 °C
VCES 600 V
Tc = 25 °C
Tc = 80 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 4.8 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 300 A
Tj = 150 °C
RG on = 5.1
RG off = 5.1
per IGBT
Values
600
379
286
300
600
-20 ... 20
6
-40 ... 175
419
307
300
600
1400
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.70
0.9
0.85
1.8
2.8
5.8
0.15
18.5
1.15
0.55
2400
1.00
110
85
11.5
820
70
15
max. Unit
1.9
2.1
1
0.9
3.0
4.0
6.5
0.45
0.16
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 11 – 02.12.2008
1


Semikron Electronic Components Datasheet

SEMIX302GB066HDS Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX302GB066HDS pdf
SEMiX302GB066HDs
SEMiX®2s
Trench IGBT Modules
SEMiX302GB066HDs
wwPwr.eDlaimtainShaereytD4Ua.ctaom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 300 A
Tj = 150 °C
di/dtoff = 3600 A/µs
VGE = -8 V
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
w
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
TC = 25 °C
TC = 125 °C
Temperature sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
0.9
0.75
1.0
1.5
3
2.5
typ.
1.4
1.4
1
0.85
1.3
1.8
240
35
7.5
18
0.7
1
0.045
0,493
±5%
3550
±2%
max. Unit
1.6
1.6
1.1
0.95
1.7
2.2
0.19
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
5 Nm
5 Nm
250 g
k
K
GB
2
Rev. 11 – 02.12.2008
© by SEMIKRON


Part Number SEMIX302GB066HDS
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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