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Semikron Electronic Components Datasheet

SEMIX302GB176HDS Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX302GB176HDS pdf
SEMiX302GB176HDs
SEMiX®2s
Trench IGBT Modules
SEMiX302GB176HDs
wwPwr.eDlaimtainShaereytD4Ua.ctaom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 1000 V
VGE 20 V
Tj = 125 °C
VCES 1700 V
Tc = 25 °C
Tc = 80 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(j-s)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 8 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
IC = 200 A
Tj = 125 °C
RG on = 6.5
RG off = 6.5
per IGBT
per IGBT
GB
© by SEMIKRON
Rev. 21 – 02.12.2008
Values
1700
308
219
200
400
-20 ... 20
10
-55 ... 150
389
262
200
400
2000
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
2
2.45
1
0.9
5.0
7.8
5.8
0.1
17.6
0.73
0.58
1866
3.75
225
45
130
665
105
77
max. Unit
2.45
2.9
1.2
1.1
6.3
9.0
6.4
0.3
0.1
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
K/W
1


Semikron Electronic Components Datasheet

SEMIX302GB176HDS Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX302GB176HDS pdf
SEMiX302GB176HDs
SEMiX®2s
Trench IGBT Modules
SEMiX302GB176HDs
wwPwr.eDlaimtainShaereytD4Ua.ctaom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 125 °C
IF = 200 A
Tj = 125 °C
di/dtoff = 3100 A/µs
VGE = -15 V
VCC = 1200 V
Tj = 125 °C
Tj = 125 °C
Rth(j-c)
per diode
Rth(j-s)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperature sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
0.9
0.7
2.0
2.7
3
2.5
typ.
1.5
1.4
1.1
0.9
2.0
2.7
235
77
43
18
0.7
1
0.045
0,493
±5%
3550
±2%
max. Unit
1.7
1.6
1.3
1.1
2.0
2.7
0.15
V
V
V
V
m
m
A
µC
mJ
K/W
K/W
nH
m
m
K/W
5 Nm
5 Nm
Nm
250 g
k
K
GB
2
Rev. 21 – 02.12.2008
© by SEMIKRON


Part Number SEMIX302GB176HDS
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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