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Semikron Electronic Components Datasheet

SEMIX352GAR128DS Datasheet

SPT IGBT Modules

No Preview Available !

SEMIX352GAR128DS pdf
SEMiX352GAR128Ds
SEMiX®2s
SPT IGBT Modules
SEMiX352GAR128Ds
wwPwr.eDlaimtainShaereytD4Ua.ctaom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 600 V
VGE 20 V
Tj = 125 °C
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 8 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
377
268
200
400
-20 ... 20
10
-40 ... 150
297
204
200
400
2000
-40 ... 150
200
400
2000
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
4.5
typ.
1.9
2.10
1
0.9
4.5
6.0
5
0.1
18.9
1.24
0.78
1920
2.00
max. Unit
2.35
2.55
1.15
1.05
6.0
7.5
6.5
0.3
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAR
© by SEMIKRON
Rev. 8 – 02.12.2008
1


Semikron Electronic Components Datasheet

SEMIX352GAR128DS Datasheet

SPT IGBT Modules

No Preview Available !

SEMIX352GAR128DS pdf
SEMiX352GAR128Ds
SEMiX®2s
SPT IGBT Modules
SEMiX352GAR128Ds
wwPwr.eDlaimtainShaereytD4Ua.ctaom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(j-s)
Conditions
VCC = 600 V
IC = 200 A
Tj = 125 °C
RG on = 3
RG off = 3
per IGBT
per IGBT
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 125 °C
IF = 200 A
Tj = 125 °C
di/dtoff = 5350 A/µs
VGE = -15 V
VCC = 600 V
Tj = 125 °C
Tj = 125 °C
Rth(j-c)
per diode
Rth(j-s)
per diode
Freewheeling diode
VF = VEC
IF = 200 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 125 °C
IF = 200 A
Tj = 125 °C
di/dtoff = 5320 A/µs
VGE = -15 V
VCC = 600 V
Tj = 125 °C
Tj = 125 °C
Rth(j-c)
per diode
Rth(j-s)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperature sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
0.75
0.5
3.8
4.0
0.75
0.5
3.8
4.0
3
2.5
typ.
230
55
20
585
90
21
2.0
1.8
1.1
0.85
4.5
4.8
240
31
11
2.0
1.8
1.1
0.85
4.5
4.8
240
31
11
18
0.7
1
0.045
0,493
±5%
3550
±2%
max.
0.083
Unit
ns
ns
mJ
ns
ns
mJ
K/W
K/W
2.5
2.3
1.45
1.2
5.3
5.5
0.15
V
V
V
V
m
m
A
µC
mJ
K/W
K/W
2.5
2.3
1.45
1.2
5.3
5.5
0.15
V
V
V
V
m
m
A
µC
mJ
K/W
K/W
nH
m
m
K/W
5 Nm
5 Nm
Nm
250 g
k
K
GAR
2
Rev. 8 – 02.12.2008
© by SEMIKRON


Part Number SEMIX352GAR128DS
Description SPT IGBT Modules
Maker Semikron International
Total Page 5 Pages
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Semikron International
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