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Semikron Electronic Components Datasheet

SEMIX353GD176HDC Datasheet

Trench IGBT Modules

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SEMIX353GD176HDC pdf
SEMiX353GD176HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD176HDc
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 1000 V
VGE 20 V
VCES 1700 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 225 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
IC = 225 A
Tj = 125 °C
Tj = 125 °C
RG on = 5.6
RG off = 5.6
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
per IGBT
Values
1700
353
251
225
450
-20 ... 20
10
-55 ... 150
428
289
225
450
1800
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
2
2.45
1
0.9
4.4
6.9
5.8
0.1
19.9
0.83
0.66
2100
2.83
250
75
155
930
180
85
max. Unit
2.45
2.9
1.2
1.1
5.6
8.0
6.4
0.3
0.086
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 10 – 16.12.2009
1


Semikron Electronic Components Datasheet

SEMIX353GD176HDC Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX353GD176HDC pdf
SEMiX353GD176HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD176HDc
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 225 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
Tj = 125 °C
IRRM
Qrr
Err
IF = 225 A
Tj = 125 °C
di/dtoff = 4000 A/µs
VGE = -15 V
VCC = 1200 V
Tj = 125 °C
Tj = 125 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
1.6 1.75 V
1.5 1.7 V
0.9 1.1 1.3 V
0.7 0.9 1.1 V
2.0 2.0 2.0 m
2.7 2.7 2.7 m
280 A
83 µC
45 mJ
0.13 K/W
20 nH
0.7 m
1 m
0.014
K/W
3 5 Nm
2.5 5 Nm
Nm
900 g
493 ± 5%
3550
±2%
K
GD
2
Rev. 10 – 16.12.2009
© by SEMIKRON


Part Number SEMIX353GD176HDC
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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