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Semikron Electronic Components Datasheet

SEMIX503GD126HDC Datasheet

SPT IGBT Modules

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SEMIX503GD126HDC pdf
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SEMiX503GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX503GD126HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 600 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 300 A
Tj = 125 °C
Tj = 125 °C
RG on = 2.2
RG off = 2.2
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
per IGBT
Values
1200
466
327
300
600
-20 ... 20
10
-40 ... 150
412
284
300
600
2000
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.7
2
1
0.9
2.3
3.7
5.8
0.1
21.6
1.13
0.98
2400
2.50
275
55
28
625
125
44
max. Unit
2.1
2.45
1.2
1.1
3.0
4.5
6.5
0.3
0.08
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 17 – 16.12.2009
1


Semikron Electronic Components Datasheet

SEMIX503GD126HDC Datasheet

SPT IGBT Modules

No Preview Available !

SEMIX503GD126HDC pdf
SEMiX503GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX503GD126HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 125 °C
VF0 Tj = 25 °C
Tj = 125 °C
rF Tj = 25 °C
Tj = 125 °C
IRRM
Qrr
Err
IF = 300 A
Tj = 125 °C
di/dtoff = 6900 A/µs
VGE = -15 V
VCC = 600 V
Tj = 125 °C
Tj = 125 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min. typ. max. Unit
1.6 1.80 V
1.6 1.8 V
0.9 1 1.1 V
0.7 0.8 0.9 V
1.7 2.0 2.3 m
2.3 2.7 3.0 m
400 A
77 µC
32.5 mJ
0.14 K/W
20 nH
0.7 m
1 m
0.014
K/W
3 5 Nm
2.5 5 Nm
Nm
900 g
493 ± 5%
3550
±2%
K
GD
2
Rev. 17 – 16.12.2009
© by SEMIKRON


Part Number SEMIX503GD126HDC
Description SPT IGBT Modules
Maker Semikron International
Total Page 5 Pages
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